IPP08CN10N G
IPP08CN10N G Datasheet
IPB08CN10N G IPI08CN10N G IPP08CN10N G
| Part | Datasheet |
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IPP08CN10N G |
IPP08CN10N G (pdf) |
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| IPB08CN10N G IPI08CN10N G IPP08CN10N G Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max TO263 ID 100 V 95 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification Type IPB08CN10N G IPI08CN10N G IPP08CN10N G Package Marking PG-TO263-3 08CN10N PG-TO262-3 08CN10N PG-TO220-3 08CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current T C=25 °C T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C Avalanche energy, single pulse I D=95 A, R GS=25 dv /dt I D=95 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage3 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 95 68 380 262 ±20 167 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-06-23 IPB08CN10N G IPI08CN10N G IPP08CN10N G |
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