MAGX-000035-030000

MAGX-000035-030000 Datasheet

MAGX-000035-030000

Part	Datasheet
MAGX-000035-030000	MAGX-000035-030000 (pdf)

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MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - GHz • GaN depletion mode HEMT microwave transistor • Common source configuration • No internal matching • Broadband Class AB operation • Thermally enhanced Cu/Mo/Cu package • RoHS Compliant • +50V Typical Operation • MTTF of 114 years Channel Temperature < 200°C General purpose for pulsed or CW applications • Commercial Wireless Infrastructure - WCDMA, LTE, WIMAX • Civilian and Military Radar • Military and Commercial Communications • Public Radio • Industrial, Scientific and Medical • SATCOM • Instrumentation • Avionics Product Description The MAGX-000035-030000 is a gold metalized unmatched Gallium Nitride GaN on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-030000 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Preliminary, 23 Aug 11 Typical CW RF Performance Freq. Pout Gain Eff MHz W Ave dB % 1500 3000 3500 Ordering Information MAGX-000035-030000 MAGX-000035-SB1PPR 30W GaN Power Transistor GHz Evaluation Board ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: Visit for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product s or information contained herein without notice. MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - GHz Preliminary, 23 Aug 11 Absolute Maximum Ratings 1, 2, 3 Supply Voltage Vdd Supply Voltage Vgg Supply Current Id1 Input Power Pin Junction/Channel Temp MTTF TJ<200°C Continuous Power Dissipation Pdiss at 85 ºC Pulsed Power Dissipation Pavg at 85 ºC Thermal Resistance, Tchannel = 200 ºC , CW Thermal Resistance, Tchannel = 200 ºC , Pulsed 500uS, 10% Duty cycle Operating Temp Storage Temp ESD Min. - Machine Model MM ESD Min. - Human Body Model HBM Limit +65V -8 to 0V 1200 mA +30 dBm 200 ºC 114 years 27 W 65 W ºC/W ºC/W -40 to +95C -65 to +150C 50 V >250 V 1 Operation of this device above any one of these parameters may cause permanent damage. 2 Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 3 For saturated performance it recommended that the sum of 3*Vdd + abs Vgg <175 Parameter Test Conditions DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V Gate Threshold Voltage VDS = 5V, ID = 6mA Forward Transconductance VDS = 5V, ID = 1.5mA DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance VDS = 0v, VGS = -8V, F = 1MHz VDS = 50V, VGS = -8V, F = 1MHz Symbol Min Typ Max Units VGS th CISS COSS CRSS ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax:

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MAGX-000035-030000

GaN HEMT Power Transistor 30W CW, 30 MHz - GHz
• GaN depletion mode HEMT microwave transistor
• Common source configuration
• No internal matching
• Broadband Class AB operation
• Thermally enhanced Cu/Mo/Cu package
• RoHS Compliant
• +50V Typical Operation
• MTTF of 114 years Channel Temperature < 200°C

General purpose for pulsed or CW applications
• Commercial Wireless Infrastructure - WCDMA, LTE, WIMAX
• Civilian and Military Radar
• Military and Commercial Communications
• Public Radio
• Industrial, Scientific and Medical
• SATCOM
• Instrumentation
• Avionics

Product Description

The MAGX-000035-030000 is a gold metalized unmatched Gallium Nitride GaN on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-030000 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

Preliminary, 23 Aug 11

Typical CW RF Performance

Freq. Pout Gain Eff MHz W Ave dB %
1500
3000
3500
Ordering Information

MAGX-000035-030000 MAGX-000035-SB1PPR
30W GaN Power Transistor GHz Evaluation Board

ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

Visit for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product s or information contained herein without notice.

MAGX-000035-030000

GaN HEMT Power Transistor 30W CW, 30 MHz - GHz

Preliminary, 23 Aug 11

Absolute Maximum Ratings 1, 2, 3

Supply Voltage Vdd Supply Voltage Vgg Supply Current Id1 Input Power Pin Junction/Channel Temp

MTTF TJ<200°C

Continuous Power Dissipation Pdiss at 85 ºC Pulsed Power Dissipation Pavg at 85 ºC Thermal Resistance, Tchannel = 200 ºC , CW Thermal Resistance, Tchannel = 200 ºC , Pulsed 500uS, 10% Duty cycle Operating Temp Storage Temp ESD Min. - Machine Model MM ESD Min. - Human Body Model HBM

Limit
+65V -8 to 0V 1200 mA +30 dBm 200 ºC 114 years
27 W 65 W ºC/W
ºC/W
-40 to +95C -65 to +150C
50 V >250 V
1 Operation of this device above any one of these parameters may cause permanent damage. 2 Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 3 For saturated performance it recommended that the sum of 3*Vdd + abs Vgg <175

Parameter

Test Conditions

DC CHARACTERISTICS

Drain-Source Leakage Current VGS = -8V, VDS = 175V

Gate Threshold Voltage

VDS = 5V, ID = 6mA

Forward Transconductance

VDS = 5V, ID = 1.5mA

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance

VDS = 0v, VGS = -8V, F = 1MHz VDS = 50V, VGS = -8V, F = 1MHz

Symbol Min Typ Max Units

VGS th

CISS

COSS

CRSS

ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000035-030000 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000035-030000 646868