IPP03N03LB G

IPP03N03LB G Datasheet


IPP03N03LB G

Part Datasheet
IPP03N03LB G IPP03N03LB G IPP03N03LB G (pdf)
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Power-Transistor

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1 for target application
• N-channel - Logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating RoHS compliant

Product Summary V DS R DS on ,max ID

IPP03N03LB G
30 V 80 A

PG-TO220-3-1

Type IPP03N03LB G

Package PG-TO220-3-1

Marking 03N03LB

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C3

Avalanche energy, single pulse

I D=80 A, R GS=25
dv /dt

I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1
1 J-STD20 and JESD22

Value 80 320 580
±20 150 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-05-06

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case SMD version, device on PCB

R thJC R thJA
minimal footprint 6 cm2 cooling area5

IPP03N03LB G
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Datasheet ID: IPP03N03LBG 638231