IPD50R399CP
IPD50R399CP Datasheet
IPD50R399CP
| Part | Datasheet |
|---|---|
IPD50R399CP |
IPD50R399CP (pdf) |
| PDF Datasheet Preview |
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| CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating RoHS compliant • Quailfied according to JEDEC1 for target applications Product Summary VDS RDS on ,max Qg,typ IPD50R399CP 550 V 17 nC PG-TO252 CoolMOS CP is designed for • Hard and softswitching SMPS topologies • DCM PFC for Lamp Ballast • PWM for Lamp Ballast & PDP and LCD TV Type IPD50R399CP Package PG-TO252 Marking 5R399P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2 Avalanche energy, single pulse Avalanche energy, repetitive 2 ,3 AR Avalanche current, repetitive 2 ,3 AR MOSFET dv /dt ruggedness I D,pulse E AS E AR I AR dv /dt T C=25 °C T C=100 °C T C=25 °C I D=3.3 A, V DD=50 V I D=3.3 A, V DD=50 V V DS=0...400 V Gate source voltage static AC f>1 Hz Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Value 9 6 20 215 50 ±20 ±30 83 -55 150 Unit A A V/ns V W °C |
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