IPF10N03LA

IPF10N03LA Datasheet

IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G

Part	Datasheet
IPF10N03LA	IPF10N03LA (pdf)

Related Parts	Information
IPS10N03LA G	IPS10N03LA G
IPD10N03LA	IPD10N03LA
IPF10N03LA G	IPF10N03LA G
IPU10N03LA G	IPU10N03LA G
IPU10N03LA	IPU10N03LA
IPD10N03LA G	IPD10N03LA G

PDF Datasheet Preview
Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary V DS R DS on ,max ID 25 V 30 A Type IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA Package Marking P-TO252-3-11 10N03LA P-TO252-3-23 10N03LA P-TO251-3-11 10N03LA P-TO251-3-1 10N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=30 A, R GS=25 dv /dt I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 30 210 80 ±20 52 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-14 Parameter Symbol Conditions

PDF Datasheet Preview

Power-Transistor

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1 for target application
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant

IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G

Product Summary V DS R DS on ,max ID
25 V 30 A

Type

IPD10N03LA

IPF10N03LA

IPS10N03LA

IPU10N03LA

Package Marking

P-TO252-3-11 10N03LA

P-TO252-3-23 10N03LA

P-TO251-3-11 10N03LA

P-TO251-3-1 10N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C3

Avalanche energy, single pulse

I D=30 A, R GS=25
dv /dt

I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 30 210 80
±20 52 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-04-14

Parameter

Symbol Conditions

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Datasheet ID: IPF10N03LA 638205