IPD110N12N3GBUMA1
IPD110N12N3GBUMA1 Datasheet
IPS110N12N3 G IPD110N12N3 G
| Part | Datasheet |
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IPD110N12N3GBUMA1 |
IPD110N12N3GBUMA1 (pdf) |
| Related Parts | Information |
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IPS110N12N3GBKMA1 |
IPS110N12N3GBKMA1 |
| PDF Datasheet Preview |
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| MOSFET Final OptiMOSTM3Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary VDS RDS on ,max ID • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Halogen free according to IEC61249-2-21 * • Ideal for high-frequency switching and synchronous rectification Type IPS110N12N3 G IPD110N12N3 G IPD110N12N3 G IPS110N12N3 G 120 V 11 mΩ 75 A Package PG-TO251-3 PG-TO252-3 Marking 110N12N 110N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C Avalanche energy, single pulse Gate source voltage3 E AS V GS I D=75 A, R GS=25 Ω P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 2 see figure 3 Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V * Except package TO251-3 Value Unit ±20 -55 175 |
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