IXFN102N30P
IXFN102N30P Datasheet
PolarHVTM HiPerFET IXFN 102N30P Power MOSFET
| Part | Datasheet |
|---|---|
IXFN102N30P |
IXFN102N30P (pdf) |
| PDF Datasheet Preview |
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| Preliminary Technical Information PolarHVTM HiPerFET IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode V = 300 V DSS ID25 = 88 A RDS on 33 200 ns VDSS VDGR V VGSM ID25 IL I IAR EAR E dv/dt TJM Tstg TL VISOL Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C RGS = 1 Continuous Transient TC = 25° C Lead Current Limit, RMS 25° pulse width limited TC = 25° C TC = 25° C = 25° C IS di/dt A/µs, VDD TJ C, RG = 4 TC = 25° C mm in. from case for 10 s 50/60 Hz, RMS IISOL mA Mounting torque Terminal connection torque t = 1 min t=1s Maximum Ratings ± 20 ± 30 miniBLOC, SOT-227 B IXFN E153432 A G = Gate D = Drain mJ S = Source Either Source terminal S can be used as the V/ns Source terminal or the Kelvin Source gate return terminal. |
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