IPB022N04LGATMA1

IPB022N04LGATMA1 Datasheet

IPB022N04L G

Part	Datasheet
IPB022N04LGATMA1	IPB022N04LGATMA1 (pdf)

PDF Datasheet Preview
Type Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • 100% Avalanche tested • Pb-free plating RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB022N04L G Product Summary V DS R DS on ,max ID IPB022N04L G 40 V mW 90 A Package Marking PG-TO263-3 022N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2 Avalanche current, single pulse3 Avalanche energy, single pulse Gate source voltage 1 J-STD20 and JESD22 V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=90 A, R GS=25 W Value 90 400 90 150 ±20 Unit A 2009-12-11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 IPB022N04L G Value Unit -55 175 55/175/56 Parameter Symbol Conditions Values

PDF Datasheet Preview

Type

Power-Transistor

Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• 100% Avalanche tested
• Pb-free plating RoHS compliant
• Halogen-free according to IEC61249-2-21

Type

IPB022N04L G

Product Summary V DS R DS on ,max ID

IPB022N04L G
40 V mW 90 A

Package Marking

PG-TO263-3 022N04L

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

Pulsed drain current2 Avalanche current, single pulse3 Avalanche energy, single pulse Gate source voltage 1 J-STD20 and JESD22

V GS=10 V, T C=25 °C

V GS=10 V, T C=100 °C

V GS=4.5 V, T C=25 °C

V GS=4.5 V, T C=100 °C

I D,pulse I AS E AS V GS

T C=25 °C T C=25 °C I D=90 A, R GS=25 W

Value 90
400 90 150 ±20

Unit A
2009-12-11

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

IPB022N04L G

Value

Unit
-55 175
55/175/56

Parameter

Symbol Conditions

Values

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Datasheet ID: IPB022N04LGATMA1 638165