IPU04N03LA
IPU04N03LA Datasheet
IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G
| Part | Datasheet |
|---|---|
IPU04N03LA |
IPU04N03LA (pdf) |
| Related Parts | Information |
|---|---|
IPD04N03LA G |
IPD04N03LA G |
IPU04N03LA G |
IPU04N03LA G |
IPS04N03LA G |
IPS04N03LA G |
IPF04N03LA G |
IPF04N03LA G |
IPF04N03LA |
IPF04N03LA |
| PDF Datasheet Preview |
|---|
| Type Power-Transistor Package Marking • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary V DS R DS on ,max SMD version ID 25 V 50 A Type IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Package Marking P-TO252-3-11 04N03LA P-TO252-3-23 04N03LA P-TO251-3-11 04N03LA P-TO251-3-1 04N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=45 A, R GS=25 dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 50 350 600 ±20 115 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-11 IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Parameter |
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