BGR405H6327XTSA1

BGR405H6327XTSA1 Datasheet

BGR405

Part	Datasheet
BGR405H6327XTSA1	BGR405H6327XTSA1 (pdf)

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BGR405 NPN Silicon RF Transistor With Bias Circuitry Small Signal Discretes Edition 2008-06-06 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGR405, NPN Silicon RF Transistor With Bias Circuitry Prevision History no previous version Trademarks is a registered trademark of Infineon Technologies AG. BGR405 Data Sheet BGR405 NPN Silicon RF Transistor With Bias Circuitry* NPN Silicon RF Transistor With Bias Circuitry* Features • Noise figure NF = dB at GHz • Gain S21 = dB at GHz • On chip bias circuitry, mA bias current at VCC = V • SIEGET 25 GHz fT-Line • Pb-free RoHS compliant package * Short term description Applications • LNAs The BGR405 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing. Type BGR405 Package SOT343 Marking AVs Note ESD Electrostatic discharge sensitive device, observe handling precaution! 5 287 Figure 1 Circuit diagram Note Due to design there is an additional diode between emitter and collector, which does not effect normal operation for common emitter configuration. Data Sheet BGR405 Table 1 Pin 1 2 3 4 Pinning table Function RFIN GND RFOUT VCC Maximum Ratings Note All Voltages refer to GND-node Table 2 Maximum ratings Parameter Value Unit

PDF Datasheet Preview

BGR405

NPN Silicon RF Transistor With Bias Circuitry

Small Signal Discretes

Edition 2008-06-06

Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BGR405, NPN Silicon RF Transistor With Bias Circuitry

Prevision History no previous version

Trademarks is a registered trademark of Infineon Technologies AG.

BGR405

Data Sheet

BGR405

NPN Silicon RF Transistor With Bias Circuitry*

NPN Silicon RF Transistor With Bias Circuitry*

Features
• Noise figure NF = dB at GHz
• Gain S21 = dB at GHz
• On chip bias circuitry, mA bias current at VCC = V
• SIEGET 25 GHz fT-Line
• Pb-free RoHS compliant package
* Short term description

Applications
• LNAs

The BGR405 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing.

Type BGR405

Package SOT343

Marking AVs

Note ESD Electrostatic discharge sensitive device, observe handling precaution!
5 287

Figure 1 Circuit diagram

Note Due to design there is an additional diode between emitter and collector, which does not effect normal operation for common emitter configuration.

Data Sheet

BGR405

Table 1 Pin 1 2 3 4

Pinning table

Function RFIN GND RFOUT VCC

Maximum Ratings

Note All Voltages refer to GND-node

Table 2 Maximum ratings

Parameter

Value

Unit

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BGR405H6327XTSA1 Datasheet file may be downloaded here without warranties.

Datasheet ID: BGR405H6327XTSA1 637729