IPP096N03L G
IPP096N03L G Datasheet
IPP096N03L G
| Part | Datasheet |
|---|---|
IPP096N03L G |
IPP096N03L G (pdf) |
| Related Parts | Information |
|---|---|
|
IPB096N03LGATMA1 |
IPB096N03LGATMA1 |
| PDF Datasheet Preview |
|---|
| Type Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Avalanche rated • Pb-free plating RoHS compliant Product Summary V DS R DS on ,max ID Type IPP096N03L G IPB096N03L G IPP096N03L G IPB096N03L G 30 V m 35 A Package Marking PG-TO220-3 096N03L PG-TO263-3 096N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C I D,pulse I AS E AS dv /dt T C=25 °C T C=25 °C I D=12 A, R GS=25 : I D=35 A, V DS=24 V, di /dt =200 A/us, T j,max=175 °C Value 35 30 245 35 40 ±20 Unit A mJ kV/us V 2007-08-29 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 IPP096N03L G IPB096N03L G Value |
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