APTM120A65FT1G
APTM120A65FT1G Datasheet
APTM120A65FT1G
| Part | Datasheet |
|---|---|
APTM120A65FT1G |
APTM120A65FT1G (pdf) |
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| APTM120A65FT1G Phase leg MOSFET Power Module VDSS = 1200V RDSon = 650mΩ typ Tj = 25°C ID = 16A Tc = 25°C Pins 1/2 3/4 5/6 must be shorted together Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1200 Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTM120A65FT1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current VDS = 1200V VGS = 0V Tj = 25°C Tj = 125°C 250 µA 1000 RDS on Drain Source on Resistance VGS = 10V, ID = 14A 650 780 mΩ VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current VGS = VDS, ID = 2.5mA VGS = ±30 V 34 5V ±100 nA Dynamic Characteristics |
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