IPB050N06NGATMA1

IPB050N06NGATMA1 Datasheet


IPP050N06N G IPB050N06N G

Part Datasheet
IPB050N06NGATMA1 IPB050N06NGATMA1 IPB050N06NGATMA1 (pdf)
Related Parts Information
IPP050N06N G IPP050N06N G IPP050N06N G
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Power-Transistor

Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant

IPP050N06N G IPB050N06N G

Product Summary V DS R DS on ,max SMDversion ID
60 V m 100 A

Type

IPP050N06N

IPB050N06N

Package Marking

PG-TO220-3 050N06N

PG-TO263-3 050N06N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current Pulsed drain current

ID I D,pulse

T C=25 °C1 T C=100 °C T C=25 °C2

Avalanche energy, single pulse

I D=100 A, R GS=25 :
dv /dt

I D=100 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C

Gate source voltage

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1
1 Current is limited by bondwire with an RthJC=0.5 the chip is able to carry 160A 2 See figure 3

Value 100 400 810
±20 300 -55 175 55/175/56

Unit A
mJ kV/us V W °C
2007-08-29

IPP050N06N G IPB050N06N G

Parameter

Symbol Conditions
min.

Values typ.

Unit max.

Thermal characteristics

Thermal resistance, junction - case R thJC
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Datasheet ID: IPB050N06NGATMA1 638118