IPP050N06N G IPB050N06N G
Part | Datasheet |
---|---|
![]() |
IPB050N06NGATMA1 (pdf) |
Related Parts | Information |
---|---|
![]() |
IPP050N06N G |
PDF Datasheet Preview |
---|
Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPP050N06N G IPB050N06N G Product Summary V DS R DS on ,max SMDversion ID 60 V m 100 A Type IPP050N06N IPB050N06N Package Marking PG-TO220-3 050N06N PG-TO263-3 050N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T C=25 °C1 T C=100 °C T C=25 °C2 Avalanche energy, single pulse I D=100 A, R GS=25 : dv /dt I D=100 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C Gate source voltage Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 1 Current is limited by bondwire with an RthJC=0.5 the chip is able to carry 160A 2 See figure 3 Value 100 400 810 ±20 300 -55 175 55/175/56 Unit A mJ kV/us V W °C 2007-08-29 IPP050N06N G IPB050N06N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC |
More datasheets: DSEP60-03A | IRD-LPC1768-DEV | SAF-C161U-LF V1.3 | ICS954130BF | P1040006 | IRLW610ATM | IRLI610ATU | DAM15SPA197 | 76650-0157 | IPP050N06N G |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IPB050N06NGATMA1 Datasheet file may be downloaded here without warranties.