DSEP 60-03A
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DSEP60-03A (pdf) |
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DSEP 60-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 60 A VRRM = 300 V trr = 30 ns VRSM V 300 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight RthJC RthCH trr VRRM V Type TO-247 AD DSEP 60-03A C TAB Conditions TC = 110°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive A = Anode, C = Cathode, TAB = Cathode Maximum Ratings i 700 • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 TC = 25°C mounting torque typical r Conditions o TVJ = 25°C VR = VRRM f TVJ = 150°C VR = VRRM IF = 60 A TVJ = 150°C tTVJ = 25°C No IF = 1 A -di/dt = 300 A/µs; w230 e0.8...1.2 Characteristic Values typ. max. • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies SMPS • Inductive heating • Uninterruptible power supplies UPS • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Low IRM reduces - Power dissipation within the diode - Turn-onlossinthecommutatingswitch VR = 30 V TVJ = 25°C VR = 100 V IF = 130 A -diF/dt = 100 A/µs TVJ = 100°C Dimensions see Outlines.pdf Pulse test Pulse Width = 5 ms, Duty Cycle < % Pulse Width = 300 µs, Duty Cycle < % |
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