IPB04CN10N G IPI04CN10N G IPP04CN10N G
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IPP04CN10NG (pdf) |
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IPB04CN10N G IPI04CN10N G IPP04CN10N G OptiMOS 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max TO 263 ID 100 V mΩ 100 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB04CN10N G IPI04CN10N G IPP04CN10N G Package Marking PG-TO263-3 04CN10N PG-TO262-3 04CN10N PG-TO220-3 04CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 T C=100 °C Pulsed drain current3 I D,pulse T C=25 °C Avalanche energy, single pulse Gate source voltage 4 E AS V GS I D=100 A, R GS=25 Ω Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value Unit 1000 ±20 -55 175 55/175/56 2010-01-13 IPB04CN10N G IPI04CN10N G IPP04CN10N G |
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