IPP04CN10NG

IPP04CN10NG Datasheet


IPB04CN10N G IPI04CN10N G IPP04CN10N G

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IPP04CN10NG IPP04CN10NG IPP04CN10NG (pdf)
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IPB04CN10N G IPI04CN10N G IPP04CN10N G

OptiMOS 2 Power-Transistor

Features
• N-channel, normal level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on

Product Summary V DS R DS on ,max TO 263 ID
100 V mΩ 100 A
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21

Type

IPB04CN10N G

IPI04CN10N G

IPP04CN10N G

Package Marking

PG-TO263-3 04CN10N

PG-TO262-3 04CN10N

PG-TO220-3 04CN10N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

T C=100 °C

Pulsed drain current3

I D,pulse T C=25 °C

Avalanche energy, single pulse Gate source voltage 4

E AS V GS

I D=100 A, R GS=25 Ω

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value

Unit
1000
±20
-55 175
55/175/56
2010-01-13

IPB04CN10N G IPI04CN10N G IPP04CN10N G
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Datasheet ID: IPP04CN10NG 638105