IHW20N120R2

IHW20N120R2 Datasheet

IHW20N120R2

Part	Datasheet
IHW20N120R2	IHW20N120R2 (pdf)

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IHW20N120R2 Soft Switching Series Features • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • and Fieldstop technology for 1200 V applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE sat • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant • Complete product spectrum and PSpice Models : Applications • Inductive Cooking • Soft Switching Applications PG-TO-247-3 Type VCE sat ,Tj=25°C Tj,max Marking Package IHW20N120R2 1200V 20A 1.55V 175°C H20R1202 PG-TO-247-3 Maximum Ratings Parameter Value Unit Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage tp < 5 ms Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm in. from case for 10s VCE IC ICpuls IF IFpuls IFSM Ptot Tj Tstg - 1200 A 40 20 40 20 30 50 130 120 ±20 ±25 1 J-STD-020 and JESD-022 Power Semiconductors IHW20N120R2 Soft Switching Series

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IHW20N120R2

Soft Switching Series

Features
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• and Fieldstop technology for 1200 V applications
offers - very tight parameter distribution - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE sat
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating RoHS compliant
• Complete product spectrum and PSpice Models :

Applications
• Inductive Cooking
• Soft Switching Applications

PG-TO-247-3

Type

VCE sat ,Tj=25°C

Tj,max

Marking

Package

IHW20N120R2
1200V 20A
1.55V
175°C H20R1202 PG-TO-247-3

Maximum Ratings

Parameter

Value

Unit

Collector-emitter voltage

DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175°C Diode forward current

TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage tp < 5 ms

Power dissipation TC = 25°C Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm in. from case for 10s

VCE IC

ICpuls IF

IFpuls IFSM

Ptot Tj Tstg -
1200

A 40 20
40 20 30
50 130 120
±20
±25
1 J-STD-020 and JESD-022

Power Semiconductors

IHW20N120R2

Soft Switching Series

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Datasheet ID: IHW20N120R2 638082