QSD128

QSD128 Datasheet

QSD128

Part	Datasheet
QSD128	QSD128 (pdf)

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PACKAGE DIMENSIONS REFERENCE SURFACE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD128 COLLECTOR EMITTTER SQ. 2X Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. SCHEMATIC COLLECTOR EMITTER The QSD128 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. • NPN Silicon Phototransistor • Package Type T-1 3/4 • Notched Emitter QED12X/QED22X/QED23X • Narrow Reception Angle 24°C • Daylight Filter • Package Material and Color Black Epoxy • High Sensitivity 2001 Fairchild Semiconductor Corporation DS300360 7/20/01 1 OF 4 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD128 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1 Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 NOTE Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. ! = 880 nm, AlGaAs. ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C PARAMETER TEST CONDITIONS Peak Sensitivity Wavelength Reception Angle ±12 Collector Emitter Dark Current Collector Emitter Breakdown VCE = 10 V, Ee = 0 IC = 1 mA ICEO BVCEO Emitter Collector Breakdown IE = 100 µA BVECO On-State Collector Current 5 Ee = mW/cm2, VCE = 5 V IC ON Saturation Voltage 5

PDF Datasheet Preview

PACKAGE DIMENSIONS

REFERENCE SURFACE

PLASTIC SILICON INFRARED PHOTOTRANSISTOR

QSD128

COLLECTOR

EMITTTER

SQ. 2X

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

SCHEMATIC

COLLECTOR

EMITTER

The QSD128 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.
• NPN Silicon Phototransistor
• Package Type T-1 3/4
• Notched Emitter QED12X/QED22X/QED23X
• Narrow Reception Angle 24°C
• Daylight Filter
• Package Material and Color Black Epoxy
• High Sensitivity
2001 Fairchild Semiconductor Corporation DS300360 7/20/01
1 OF 4

PLASTIC SILICON INFRARED PHOTOTRANSISTOR

QSD128

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1

Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD

Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec
30 5 100

NOTE Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. ! = 880 nm, AlGaAs.

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C

PARAMETER

TEST CONDITIONS

Peak Sensitivity Wavelength

Reception Angle
±12

Collector Emitter Dark Current Collector Emitter Breakdown

VCE = 10 V, Ee = 0 IC = 1 mA

ICEO

BVCEO

Emitter Collector Breakdown

IE = 100 µA

BVECO

On-State Collector Current 5

Ee = mW/cm2, VCE = 5 V

IC ON

Saturation Voltage 5

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Datasheet ID: QSD128 634530