IHP10T120

IHP10T120 Datasheet

IHP10T120

Part	Datasheet
IHP10T120	IHP10T120 (pdf)

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Soft Switching Series IHP10T120 Low Loss DuoPack IGBT in and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Short circuit withstand time 10µs • Designed for : - Soft Switching Applications - Induction Heating • and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE sat - Very low Vce sat • Very soft, fast recovery anti-parallel EmCon HE diode PG-TO-220-3-1 • Low EMI • Qualified according to JEDEC1 for target applications • Application specific optimisation of inverse diode • Pb-free lead plating RoHS compliant Type IC VCE sat ,Tj=25°C Tj,max Marking Package IHP10T120 1200V 10A 1.7V 150°C H10T120 PG-TO-220-3-1 Maximum Ratings Parameter Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax, Tc = 25°C Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 1200V, Tj 150°C Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm in. from case for 10s VCE IC ICpuls IF IFpuls IFSM VGE tSC Ptot Tj Tstg - 1200 16 10 24 28 50 40 ±20 10

PDF Datasheet Preview

Soft Switching Series

IHP10T120

Low Loss DuoPack IGBT in and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Short circuit withstand time 10µs
• Designed for :
- Soft Switching Applications
- Induction Heating
• and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive temperature coefficient in VCE sat
- Very low Vce sat
• Very soft, fast recovery anti-parallel EmCon HE diode

PG-TO-220-3-1
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating RoHS compliant

Type

IC VCE sat ,Tj=25°C

Tj,max

Marking

Package

IHP10T120 1200V 10A
1.7V
150°C H10T120 PG-TO-220-3-1

Maximum Ratings

Parameter

Value

Collector-emitter voltage

DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax, Tc = 25°C Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave Gate-emitter voltage Short circuit withstand time2

VGE = 15V, VCC 1200V, Tj 150°C Power dissipation, TC = 25°C Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm in. from case for 10s

VCE IC

ICpuls IF

IFpuls IFSM

VGE tSC

Ptot Tj Tstg -
1200
16 10 24
28 50 40 ±20 10

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Datasheet ID: IHP10T120 638080