IDC08S120EX1SA3

IDC08S120EX1SA3 Datasheet


IDC08S120E

Part Datasheet
IDC08S120EX1SA3 IDC08S120EX1SA3 IDC08S120EX1SA3 (pdf)
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IDC08S120E
1200V thinQ!TM SiC Schottky Diode

Features:

Applications:

Silicon Carbide
• High Voltage CCM PFC
• Switching Behaviour Benchmark
• Switch Mode Power Supplies
• High Voltage Multipliers
• Temperature Independent Switching

Behaviour
• Qualified According to JEDEC1 Based on

Target Applications

Chip Type IDC08S120E

Die Size
1200V 7.5A x mm2

Package sawn on foil

Mechanical Parameters Die size

Area total

Anode pad size

Thickness

Wafer size

Max. possible chips per wafer
1652

Passivation frontside

Photoimide

Pad metal
3200 nm AlSiCu

Backside metal

Ni Ag

Die bond

Electrically conductive epoxy glue and soft solder

Wire bond

Reject ink dot size

Storage environment1
for original and sealed MBB bags
for open MBB bags
0.65mm max 1.2mm

Ambient atmosphere air, Temperature 17°C 25°C, < 6 month

Acc. to IEC60721-3-3 Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C 25°C, < 6 month
1 Designed for storage conditions according to Infineon TR14 Application Note “Storage of Products Supplied by Infineon Technologies

Designed for climate condition under operation according to IEC60721-3-3, class 3K3
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Datasheet ID: IDC08S120EX1SA3 638062