BUZ73L
BUZ73L Datasheet
BUZ 73L
| Part | Datasheet |
|---|---|
BUZ73L |
BUZ73L (pdf) |
| PDF Datasheet Preview |
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| SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level BUZ 73L Type BUZ 73 L 200 V RDS on Maximum Ratings Parameter Continuous drain current TC = 28 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 L = mH, Tj = 25 Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Pin 1 G Pin 2 D Package PG-TO220-3 Pb-free Yes Pin 3 S Symbol ID IDpuls IAR EAR EAS Values Unit Ptot Tj Tstg RthJC RthJA ± 20 Class 1 -55 + 150 -55 + 150 55 / 150 / 56 2009-03-31 BUZ 73L Electrical Characteristics, at Tj = unless otherwise specified |
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