BUZ32
BUZ32 Datasheet
BUZ 32
| Part | Datasheet |
|---|---|
BUZ32 |
BUZ32 (pdf) |
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| SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 32 Pin 1 G Pin 2 D Pin 3 S Type BUZ 32 VDS 200 V RDS on Maximum Ratings Parameter Continuous drain current TC = 29 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = 2 mH, Tj = 25 Gate source voltage Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Package PG-TO-220-3 Pb-free Yes Symbol ID IDpuls IAR EAR EAS VGS Ptot Tj Tstg RthJC RthJA Values Unit ± 20 -55 + 150 -55 + 150 55 / 150 / 56 2009-04-08 BUZ 32 Electrical Characteristics, at Tj = unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 VDS = 200 V, VGS = 0 V, Tj = 125 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 6 A min. Values typ. max. V BR DSS |
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