BUZ31L
BUZ31L Datasheet
BUZ 31L
| Part | Datasheet |
|---|---|
BUZ31L |
BUZ31L (pdf) |
| Related Parts | Information |
|---|---|
|
BUZ31L E3044A |
BUZ31L E3044A |
| PDF Datasheet Preview |
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| SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level BUZ 31L Type BUZ 31 L VDS 200 V RDS on Maximum Ratings Parameter Continuous drain current TC = 28 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = mH, Tj = 25 Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Pin 1 G Pin 2 D Package PG-TO220-3 Pb-free Yes Pin 3 S Symbol ID IDpuls IAR EAR EAS Ptot Tj Tstg RthJC RthJA Values Unit ± 20 Class 1 -55 + 150 -55 + 150 55 / 150 / 56 2009-03-30 BUZ 31L Electrical Characteristics, at Tj = unless otherwise specified Parameter min. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 VDS = 200 V, VGS = 0 V, Tj = 125 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 5 V, ID = 7 A V BR DSS 200 |
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