MTA18ASF1G72AZ-2G1A1

MTA18ASF1G72AZ-2G1A1 Datasheet

MTA18ASF1G72AZ 8GB

Part	Datasheet
MTA18ASF1G72AZ-2G1A1	MTA18ASF1G72AZ-2G1A1 (pdf)

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8GB x72, ECC, DR 288-Pin DDR4 UDIMM Features DDR4 SDRAM UDIMM MTA18ASF1G72AZ 8GB • DDR4 functionality and operations supported as defined in the component data sheet • 288-pin, unbuffered dual in-line memory module UDIMM • Fast data transfer rates PCB4-2666, PC4-2400 or PC4-2133 • 8GB 1 Gig x 72 • VDD = 1.20V NOM • VPP = 2.5V NOM • VDDSPD = 2.5V NOM • Supports ECC error detection and correction • Nominal and dynamic on-die termination ODT for data, strobe, and mask signals • Low-power auto self refresh LPASR • Data bus inversion DBI for data bus • On-die VREFDQ generation and calibration • Dual-rank • Onboard I2C temperature sensor with integrated serial presence-detect SPD EEPROM • 4 internal device bank groups with 4 banks per group produce 16 device banks • Fixed burst chop BC of 4 and burst length BL of 8 via the mode register set MRS • Selectable BC4 or BL8 on-the-fly OTF • Gold edge contacts • Halogen-free • Fly-by topology • Terminated control, command, and address bus Figure 1 288-Pin UDIMM MO-309, R/C-E1 Module height 31.25mm 1.23in Options • Operating temperature Commercial 0°C TOPER 95°C • Package 288-pin DIMM halogen-free • Frequency/CAS latency 0.75ns CL = 19 DDR4-2666 0.83ns CL = 17 DDR4-2400 0.93ns CL = 15 DDR4-2133 Marking None Z -2G6 -2G3 -2G1 Table 1 Key Timing Parameters Industry Speed NomenGrade clature -2G6 PC4-2666 -2G4 PC4-2400 -2G3 PC4-2400 CL = 20, CL = 19 2666 CL = 18 2666 2400 CL = 17 2400 CL = 16 2133 2400 2133 Data Rate MT/s CL = 15 2133

PDF Datasheet Preview

8GB x72, ECC, DR 288-Pin DDR4 UDIMM Features

DDR4 SDRAM UDIMM

MTA18ASF1G72AZ 8GB
• DDR4 functionality and operations supported as defined in the component data sheet
• 288-pin, unbuffered dual in-line memory module UDIMM
• Fast data transfer rates PCB4-2666, PC4-2400 or PC4-2133
• 8GB 1 Gig x 72
• VDD = 1.20V NOM
• VPP = 2.5V NOM
• VDDSPD = 2.5V NOM
• Supports ECC error detection and correction
• Nominal and dynamic on-die termination ODT for data, strobe, and mask signals
• Low-power auto self refresh LPASR
• Data bus inversion DBI for data bus
• On-die VREFDQ generation and calibration
• Dual-rank
• Onboard I2C temperature sensor with integrated
serial presence-detect SPD EEPROM
• 4 internal device bank groups with 4 banks per group produce 16 device banks
• Fixed burst chop BC of 4 and burst length BL of 8 via the mode register set MRS
• Selectable BC4 or BL8 on-the-fly OTF
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus

Figure 1 288-Pin UDIMM MO-309, R/C-E1

Module height 31.25mm 1.23in

Options
• Operating temperature Commercial 0°C TOPER 95°C
• Package 288-pin DIMM halogen-free
• Frequency/CAS latency 0.75ns CL = 19 DDR4-2666 0.83ns CL = 17 DDR4-2400 0.93ns CL = 15 DDR4-2133

Marking

None

Z -2G6 -2G3 -2G1

Table 1 Key Timing Parameters

Industry Speed NomenGrade clature
-2G6 PC4-2666
-2G4 PC4-2400
-2G3 PC4-2400

CL = 20, CL = 19
2666

CL = 18 2666 2400

CL = 17 2400

CL = 16 2133 2400 2133

Data Rate MT/s

CL = 15 2133

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Datasheet ID: MTA18ASF1G72AZ-2G1A1 648512