BUZ31 E3046
BUZ31 E3046 Datasheet
BUZ 31
| Part | Datasheet |
|---|---|
BUZ31 E3046 |
BUZ31 E3046 (pdf) |
| Related Parts | Information |
|---|---|
|
BUZ31 E3045A |
BUZ31 E3045A |
|
BUZ31 |
BUZ31 |
| PDF Datasheet Preview |
|---|
| SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level BUZ 31 Type BUZ 31 VDS 200 V RDS on Maximum Ratings Parameter Continuous drain current TC = 30 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = mH, Tj = 25 Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Pin 1 G Pin 2 D Package PG-TO-220-3 Pb-free Yes Pin 3 S Symbol ID IDpuls IAR EAR EAS Ptot Tj Tstg RthJC RthJA Values Unit ± 20 Class 1 -55 + 150 -55 + 150 55 / 150 / 56 2009-04-07 BUZ 31 Electrical Characteristics, at Tj = unless otherwise specified Parameter min. |
| More datasheets: CSI-UFFR-100-UFFR | C1361.38.90 | 71363-302LF | HE421A1250 | HE421A2450 | HE422A2450 | HE421A0550 | MWCT1003AVLH | 74AC14 | IXFX12N90Q |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BUZ31E3046 Datasheet file may be downloaded here without warranties.