IXFX12N90Q
IXFX12N90Q Datasheet
IXFH 12N90Q IXFT 12N90Q IXFX 12N90Q
| Part | Datasheet |
|---|---|
IXFX12N90Q |
IXFX12N90Q (pdf) |
| PDF Datasheet Preview |
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| HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 12N90Q IXFT 12N90Q IXFX 12N90Q VDSS ID25 RDS on = 900 V = 12 A = trr 200 ns Preliminary data sheet VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Fc Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C mm in from case for 10 s Mounting torque Mounting Force TO-247, PLUS 247 TO-268 TO-247 PLUS 247 Maximum Ratings ±20 ±30 V/ns -55 +150 -55 +150 Nm/lb.in. 20...120/4.5...27N/lbs TO-247 AD IXFH PLUS 247 IXFX TO-268 D3 IXFT G = Gate S = Source D = Drain TAB = Drain VDSS VGS th IGSS IDSS RDS on Test Conditions VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. VGS = ±20 VDC, VDS = 0 |
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