BUP213

BUP213 Datasheet

BUP 213

Part	Datasheet
BUP213	BUP213 (pdf)

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Infineon BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 213 VCE IC 1200V 32A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 90 °C Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 L = 200 µH, Tj = 25 °C Power dissipation TC = 25 °C Chip or operating temperature Storage temperature Package TO-220 AB Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg Pin 1 G Pin 2 C Pin 3 E Ordering Code Q67040-A4407 Values Unit 1200 1200 ± 20 A 32 20 64 40 200 -55 + 150 °C -55 + 150 Semiconductor Group Nov-30-1995 Infineon BUP 213 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol - RthJC Values Unit 55 / 150 / 56 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics Gate threshold voltage VGE = VCE, IC = mA Collector-emitter saturation voltage VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current VGE = 25 V, VCE = 0 V VGE th VCE sat - ICES - IGES - gfs - Ciss - Coss - Crss - 1000 1350 Unit V mA nA S pF Semiconductor Group Nov-30-1995 Infineon BUP 213

PDF Datasheet Preview

Infineon

BUP 213

IGBT Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated

Type BUP 213

VCE IC 1200V 32A

Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 90 °C Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 L = 200 µH, Tj = 25 °C Power dissipation TC = 25 °C Chip or operating temperature Storage temperature

Package TO-220 AB

Symbol VCE VCGR VGE IC

ICpuls

Ptot Tj Tstg

Pin 1 G

Pin 2 C

Pin 3 E
Ordering Code Q67040-A4407

Values

Unit
1200
1200 ± 20

A 32 20
64 40
200 -55 + 150 °C -55 + 150

Semiconductor Group

Nov-30-1995

Infineon

BUP 213

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Thermal Resistance IGBT thermal resistance, chip case

Symbol -

RthJC

Values

Unit
55 / 150 / 56

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values
min.
typ.
max.

Static Characteristics Gate threshold voltage VGE = VCE, IC = mA Collector-emitter saturation voltage VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current VGE = 25 V, VCE = 0 V

VGE th

VCE sat -

ICES -

IGES -
gfs -

Ciss -

Coss -

Crss -
1000 1350

Unit V
mA nA S pF

Semiconductor Group

Nov-30-1995

Infineon

BUP 213

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Datasheet ID: BUP213 637954