Smart Low Side Power Switch HITFET BTS 3207N
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BTS3207NNT (pdf) |
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Smart Low Side Power Switch HITFET BTS 3207N Product Summary • Logic Level Input Drain source voltage • Input Protection ESD • Thermal shutdown with auto restart • Green product RoHS compliant On-state resistance Nominal load current Clamping energy • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V DC applications • Replaces electromechanical relays and discrete circuits RDS on 500 mW ID Nom A 150 mJ VPS05163 N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. HITFET â In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection M Drain Pin 2 and 4 TAB Overload Protection Overtemperature Protection Short circuit Protection Source Pin 3 Datasheet Smart Low Side Power Switch HITFET BTS 3207N Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Drain source voltage Supply voltage for full short circuit protection6 Continuous input voltage1 Continuous input current2 -0.2V VIN 10V VIN < -0.2V or VIN > 10V VDS Vbb SC VIN IIN Operating temperature Storage temperature Tstg Power dissipation 5 |
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