Smart Low Side Power Switch HITFET BTS 3110N
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BTS3110NNT (pdf) |
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Smart Low Side Power Switch HITFET BTS 3110N Features • Logic Level Input • Input Protection ESD • Thermal shutdown • Green product RoHS compliant • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Analog driving possible Product Summary Drain source voltage VDS On-state resistance RDS on 200 m Nominal load current ID Nom A Clamping energy 150 mJ VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. HITFET In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection M Drain Pin 2 and 4 TAB Overload Protection Overtemperature Protection Short circuit Protection Source Pin 3 Datasheet Smart Low Side Power Switch HITFET BTS 3110N Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Tj = -40...150°C VDS SC Continuous input current -0.2V VIN 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Tstg Power dissipation |
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