BTS3110NNT

BTS3110NNT Datasheet


Smart Low Side Power Switch HITFET BTS 3110N

Part Datasheet
BTS3110NNT BTS3110NNT BTS3110NNT (pdf)
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Smart Low Side Power Switch HITFET BTS 3110N

Features
• Logic Level Input
• Input Protection ESD
• Thermal shutdown
• Green product RoHS compliant
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Analog driving possible

Product Summary

Drain source voltage VDS

On-state resistance RDS on 200 m

Nominal load current ID Nom A

Clamping energy
150 mJ

VPS05163

Application

All kinds of resistive, inductive and capacitive loads in switching
or linear applications
µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.

HITFET

In Pin 1

Gate-Driving Unit

Current Limitation

OvervoltageProtection

M Drain

Pin 2 and 4 TAB

Overload Protection

Overtemperature Protection

Short circuit Protection

Source

Pin 3

Datasheet

Smart Low Side Power Switch HITFET BTS 3110N

Maximum Ratings at Tj = 25°C, unless otherwise specified

Parameter

Drain source voltage

Drain source voltage for short circuit protection Tj = -40...150°C

VDS SC

Continuous input current
-0.2V VIN 10V

VIN < -0.2V or VIN > 10V

Operating temperature

Storage temperature

Tstg

Power dissipation
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Datasheet ID: BTS3110NNT 637879