BSP76E6433NT

BSP76E6433NT Datasheet

HITFETÒ II.Generation BSP 76

Part	Datasheet
BSP76E6433NT	BSP76E6433NT (pdf)

PDF Datasheet Preview
HITFETÒ II.Generation BSP 76 Smart Lowside Power Switch Product Summary • Logic Level Input • Input Protection ESD • Thermal shutdown with auto restart • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Analog driving possible Drain source voltage On-state resistance Nominal load current Clamping energy Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V DC applications • Replaces electromechanical relays and discrete circuits VDS RDS on ID Nom EAS 42 V 200 mW A 150 mJ VPS05163 N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. HITFET â In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection M Drain Pin 2 and 4 TAB Overload Protection Overtemperature Protection Short circuit Protection Source Pin 3 Complete product spectrum and additional information 2004-03-05 BSP 76 Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Drain source voltage Supply voltage for full short circuit protection Continuous input voltage1 Continuous input current2 -0.2V VIN 10V VIN < -0.2V or VIN > 10V VDS Vbb SC VIN IIN Operating temperature Storage temperature Tstg Power dissipation 5 Ptot TC = 85 °C Unclamped single pulse inductive energy 2 Load dump protection VLoadDump2 3 = VA + VS VLD VIN = 0 and 10 V, td = 400 ms, RI = 2 W, Ordering Code Q67060-S7201-A2 acc. to DIN 6784 GPS05560 BSP 76 Page 9 2004-03-05 BSP 76 2004-03-05 2003-04-22 Page 2, 4 2, 3 Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1 Climatic category changed from DIN IEC 68-1 to DIN EN 60068-1 VIN th test conditions from ID=0.15mA to ID=0.3mA For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide see our webpage at are registered trademarks of Infineon Technologies AG. Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide see address list . Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2004-03-05

PDF Datasheet Preview

HITFETÒ II.Generation BSP 76

Smart Lowside Power Switch

Product Summary
• Logic Level Input
• Input Protection ESD
• Thermal shutdown with
auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Analog driving possible

Drain source voltage On-state resistance Nominal load current Clamping energy

Application
• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• µC compatible power switch for 12 V DC applications
• Replaces electromechanical relays and discrete circuits

VDS RDS on ID Nom EAS
42 V 200 mW A 150 mJ

VPS05163

N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions.

HITFET â

In Pin 1

Gate-Driving Unit

Current Limitation

OvervoltageProtection

M Drain

Pin 2 and 4 TAB

Overload Protection

Overtemperature Protection

Short circuit Protection

Source

Pin 3

Complete product spectrum and additional information
2004-03-05

BSP 76

Maximum Ratings at Tj = 25°C, unless otherwise specified

Parameter

Drain source voltage Supply voltage for full short circuit protection Continuous input voltage1 Continuous input current2 -0.2V VIN 10V VIN < -0.2V or VIN > 10V

VDS Vbb SC VIN IIN

Operating temperature

Storage temperature

Tstg

Power dissipation 5

Ptot

TC = 85 °C

Unclamped single pulse inductive energy 2

Load dump protection VLoadDump2 3 = VA + VS VLD

VIN = 0 and 10 V, td = 400 ms, RI = 2 W,
Ordering Code Q67060-S7201-A2
acc. to DIN 6784

GPS05560

BSP 76

Page 9
2004-03-05

BSP 76
2004-03-05 2003-04-22

Page 2, 4 2, 3

Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1

Climatic category changed from DIN IEC 68-1 to DIN EN 60068-1 VIN th test conditions from ID=0.15mA to ID=0.3mA

For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide see our webpage at are registered trademarks of Infineon Technologies AG.

Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001 All Rights Reserved.

Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide see address list .

Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Page 10
2004-03-05

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BSP76E6433NT Datasheet file may be downloaded here without warranties.

Datasheet ID: BSP76E6433NT 637843