BSP615S2L
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BSP615S2L (pdf) |
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Power-Transistor • N-Channel • Enhancement mode • Logic Level BSP615S2L Product Summary RDS on 90 SOT 223 Type BSP615S2L Package SOT 223 Ordering Code Marking Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Value Unit Continuous drain current TA=25°C TA=70°C Pulsed drain current ID puls TA=25°C Gate source voltage Power dissipation VGS Ptot ± 20 TA=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg +150 55/150/00 2003-10-29 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Pin 4 Thermal resistance, chip to ambient air: min. footprint 6 cm2 cooling area 1 BSP615S2L Values Unit min. typ. max. RthJS RthJA 19 23 K/W - 120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V BR DSS 55 VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS ID=12µA Zero gate voltage drain current |
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