BSP299
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BSP299L6327HUSA1 (pdf) |
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BSP299 E6327 |
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BSP299 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = V • Pb-free lead plating RoHS compliant • Qualified according to AEC Q101 Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 299 Type BSP 299 VDS 500 V Pb-free Yes RDS on Package SOT-223 Tape and Reel Information L6327 Marking BSP299 Maximum Ratings Parameter Continuous drain current TA = 25 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse ID = A, RGS = 25 T j = 25 °C Gate source voltage Power dissipation TA = 25 °C ESD Class JESD22-A114-HBM Symbol ID IDpuls EAS VGS Ptot Values Unit ± 20 Class 1b 2011-06-01 BSP299 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1 Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg R thJA R thJS 1 Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Values Unit -55 + 150 °C -55 + 150 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. |
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