BSO303PNTMA1
BSO303PNTMA1 Datasheet
BSO303P
| Part | Datasheet |
|---|---|
BSO303PNTMA1 |
BSO303PNTMA1 (pdf) |
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| BSO303P OptiMOSTM-P Power-Transistor Feature • Dual P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated Type BSO303P Package P-SO 8 Product Summary -30 V RDS on 21 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SIS00070 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Pulsed drain current TA=25°C Avalanche energy, single pulse ID=-8.2 A , VDD=-25V, ID puls EAS dv/dt IS=-8.2A, VDS=-24V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Value ±20 2 +150 55/150/56 Unit A mJ kV/µs V W °C 2002-01-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: min. footprint, t < 10s 6 cm2 cooling area 1 BSO303P Values Unit min. typ. max. RthJS RthJA |
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