MPSA18_D26Z
MPSA18_D26Z Datasheet
MPSA18
| Part | Datasheet |
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MPSA18_D26Z |
MPSA18_D26Z (pdf) |
| Related Parts | Information |
|---|---|
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MPSA18_D27Z |
MPSA18_D27Z |
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MPSA18_D74Z |
MPSA18_D74Z |
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MPSA18_D75Z |
MPSA18_D75Z |
| PDF Datasheet Preview |
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| MPSA18 MPSA18 Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 100 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA18 625 200 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation MPSA18 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
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