BSM35GP120BOSA1
BSM35GP120BOSA1 Datasheet
BSM35GP120
| Part | Datasheet |
|---|---|
BSM35GP120BOSA1 |
BSM35GP120BOSA1 (pdf) |
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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Durchlaßstrom Grenzeffektivwert RMS forward current per chip Dauergleichstrom DC forward current Stoßstrom Grenzwert surge forward current Grenzlastintegral I2t - value TC = 80°C tP = 10 ms, tP = 10 ms, tP = 10 ms, tP = 10 ms, Tvj = 25°C Tvj = 150°C Tvj = 25°C Tvj = 150°C VRRM 1600 IFRMSM IFSM Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Tc = 80 °C TC = 25 °C tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25°C Gate-Emitter-Spitzenspannung gate-emitter peak voltage VCES 1200 IC,nom. TC = 80 °C ICRM Ptot VGES +/- 20V Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I2t - value Tc = 80 °C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IFRM Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current |
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