BSM35GD120DN2

BSM35GD120DN2 Datasheet

BSM 35 GD 120 DN2

Part	Datasheet
BSM35GD120DN2	BSM35GD120DN2 (pdf)

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BSM 35 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 DN2 BSM35GD120DN2E3224 VCE IC 1200V 50A 1200V 50A Package ECONOPACK 2 ECONOPACK 2K Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg RthJC RthJCD Vis - Ordering Code C67076-A2506-A67 C67070-A2506-A67 Values Unit 1200 1200 ± 20 A 50 35 + 150 -40 + 125 2500 40 / 125 / 56 2006-01-31 BSM 35 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics Gate threshold voltage VGE th VGE = VCE, IC = mA Collector-emitter saturation voltage VCE sat VGE = 15 V, IC = 35 A, Tj = 25 °C VGE = 15 V, IC = 35 A, Tj = 125 °C Zero gate voltage collector current ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V gfs 11 Ciss - Coss - Crss - Unit V mA nA S nF 2006-01-31 BSM 35 GD 120 DN2

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BSM 35 GD 120 DN2

IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate

Type BSM 35 GD 120 DN2 BSM35GD120DN2E3224

VCE IC 1200V 50A 1200V 50A

Package ECONOPACK 2 ECONOPACK 2K

Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature

Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Symbol VCE VCGR

VGE IC

ICpuls

Ptot

Tj Tstg RthJC RthJCD Vis -
Ordering Code C67076-A2506-A67 C67070-A2506-A67

Values

Unit
1200
1200 ± 20

A 50 35
+ 150
-40 + 125
2500
40 / 125 / 56
2006-01-31

BSM 35 GD 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values
min.
typ.
max.

Static Characteristics

Gate threshold voltage

VGE th

VGE = VCE, IC = mA

Collector-emitter saturation voltage

VCE sat

VGE = 15 V, IC = 35 A, Tj = 25 °C

VGE = 15 V, IC = 35 A, Tj = 125 °C

Zero gate voltage collector current

ICES

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

Gate-emitter leakage current

IGES

VGE = 20 V, VCE = 0 V
gfs 11

Ciss -

Coss -

Crss -

Unit V
mA nA S nF
2006-01-31

BSM 35 GD 120 DN2

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Datasheet ID: BSM35GD120DN2 637788