SPI11N65C3HKSA1

SPI11N65C3HKSA1 Datasheet

SPP11N65C3,SPA11N65C3 SPI11N65C3

Part	Datasheet
SPI11N65C3HKSA1	SPI11N65C3HKSA1 (pdf)

Related Parts	Information
SPA11N65C3XKSA1	SPA11N65C3XKSA1
SPP11N65C3XKSA1	SPP11N65C3XKSA1
SPI11N65C3XKSA1	SPI11N65C3XKSA1

PDF Datasheet Preview
Cool MOS Power Transistor SPP11N65C3,SPA11N65C3 SPI11N65C3 PG-TO262 V DS RDS on 650 V 11 A PG-TO220FP PG-TO220 Type SPP11N65C3 SPA11N65C3 SPI11N65C3 Package PG-TO220 PG-TO220FP PG-TO262 Ordering Code Q67040-S4557 SP000216318 Q67040-S4561 Marking 11N65C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.5A, VDD=50V Avalanche energy, repetitive limited 2 jmax ID=4A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC f >1Hz Power dissipation, TC = 25°C Operating and storage temperature ID puls EAS IAR VGS Ptot Tj , Tstg Value SPP_I SPA Unit A ±20 ±20 V ±30 ±30 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB min. footprint 6 cm2 cooling area 3 Soldering temperature, wavesoldering mm in. from case for 10s Symbol dv/dt Value Unit V/ns RthJC RthJC_FP RthJA RthJA_FP RthJA T sold Values Unit min. typ. max.

PDF Datasheet Preview

Cool MOS Power Transistor

SPP11N65C3,SPA11N65C3 SPI11N65C3

PG-TO262

V DS RDS on
650 V 11 A

PG-TO220FP PG-TO220

Type SPP11N65C3 SPA11N65C3 SPI11N65C3

Package PG-TO220 PG-TO220FP PG-TO262
Ordering Code Q67040-S4557 SP000216318 Q67040-S4561

Marking 11N65C3

Maximum Ratings Parameter

Continuous drain current

TC = 25 °C TC = 100 °C

Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse

ID=2.5A, VDD=50V

Avalanche
energy,
repetitive
limited
2 jmax

ID=4A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax

Gate source voltage

Gate source voltage AC f >1Hz

Power dissipation, TC = 25°C

Operating and storage temperature

ID puls EAS

IAR VGS Ptot Tj , Tstg

Value SPP_I SPA

Unit A
±20
±20 V
±30
±30
2009-11-30

SPP11N65C3,SPA11N65C3 SPI11N65C3

Maximum Ratings Parameter Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

Thermal Characteristics Parameter

Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB min. footprint 6 cm2 cooling area 3 Soldering temperature, wavesoldering mm in. from case for 10s

Symbol dv/dt

Value

Unit

V/ns

RthJC RthJC_FP RthJA RthJA_FP RthJA

T sold

Values

Unit
min. typ. max.

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Datasheet ID: SPI11N65C3HKSA1 638275