BSF077N06NT3GXUMA1
BSF077N06NT3GXUMA1 Datasheet
OptiMOS BSF077N06NT3 G
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BSF077N06NT3GXUMA1 |
BSF077N06NT3GXUMA1 (pdf) |
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| n-Channel Power MOSFET OptiMOS BSF077N06NT3 G Data Sheet 2011-03-01 Preliminary Industrial & Multimarket OptiMOS Power-MOSFET BSF077N06NT3 G OptiMOS 60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 60V the best choice for the demanding requirements of switched mode power supplies in Servers, Datacom and Telecom applications but also for motor drives. With almost no parasitic package inductances, the CanPAK allows best controllability of the gate in highly dynamic switching enviroments. This package in addition features best cooling capability through top-side cooling of the metal can. Hence, this packaging technology combined with the OptiMOS silicon enables highest efficiency levels while having mininal space requirements at the same time • Optimized technology for DC/DC converters • 100% avalanche tested • Excellent gate charge x RDS on product FOM • Qualified according to JEDEC1 for target applications • Superior thermal resistance • Pb-free plating RoHS compliant • Halogen-free according to IEC61249-2-21 • Double.sided cooling • Compatible with package ST footprint and outline • Low profile <0.7mm • Low parasitic inductance • DC/DC converters • Synchronous rectification • Power distribution • Motor drive applications Table 1 Key Performance Parameters Parameter Value Unit RDS on ,max QOSS Qg.typ Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools Type BSF077N06NT3 G Package MG-WDSON-2 Marking 0206 1 J-STD20 and JESD22 Preliminary Data Sheet 2011-03-01 OptiMOS Power-MOSFET BSF077N06NT3 G Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current VGS=10 V, TC=25 °C VGS=10 V, TC=100 °C Pulsed drain current2 ID,pulse VGS=10 V, TA=25 °C, RthJA=58 K/W1 TC=25 °C Avalanche energy, single pulse mJ ID=30 A,RGS=25 Ω Gate source voltage |
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