BSD816SNL6327HTSA1
BSD816SNL6327HTSA1 Datasheet
BSD816SN
| Part | Datasheet |
|---|---|
BSD816SNL6327HTSA1 |
BSD816SNL6327HTSA1 (pdf) |
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| OptiMOS 2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level 1.8V rated • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free RoHS compliant • Halogen-free according to IEC61249-2-21 BSD816SN Product Summary VDS RDS on ,max VGS=2.5 V VGS=1.8 V 20 V 160 mW 240 A PG-SOT363 Type Package Tape and Reel Information BSD816SN PG-SOT363 H6327 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking XAs Avalanche energy, single pulse I D=1.4 A, R GS=25 W Lead Free Yes Packing Non dry Value Unit dv /dt I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation1 Operating and storage temperature ESD Class P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category DIN IEC 68-1 ±8 -55 150 0 <250V 260 °C 55/150/56 kV/µs V W °C 2013-04-15 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions |
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