IKP01N120H2XKSA1
IKP01N120H2XKSA1 Datasheet
IKP01N120H2
| Part | Datasheet |
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IKP01N120H2XKSA1 |
IKP01N120H2XKSA1 (pdf) |
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| IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A • Pb-free lead plating RoHS compliant • Qualified according to JEDEC2 for target applications • Complete product spectrum and PSpice Models : PG-TO-220-3-1 Type IKP01N120H2 1200V 1A Eoff 0.09mJ Tj 150°C Marking Package K01H1202 PG-TO-220-3-1 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm in. from case for 10s Symbol VCE IC ICpuls - VGE Ptot Tj , Tstg - Value Unit 1200 ±20 2 J-STD-020 and JESD-022 Power Semiconductors IKP01N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, Junction - case Thermal resistance, junction ambient Conditions RthJC RthJCD RthJA PG-TO-220-3-1 Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Conditions |
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