BSC079N03SG

BSC079N03SG Datasheet

BSC079N03S G

Part	Datasheet
BSC079N03SG	BSC079N03SG (pdf)

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Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • Avalanche rated • Pb-free plating RoHS compliant Product Summary V DS R DS on ,max ID BSC079N03S G 30 V 40 A P-TDSON-8 Type BSC079N03S G Package P-TDSON-8 Ordering Code Marking Q67042 S4290 079N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W2 Pulsed drain current Avalanche energy, single pulse I D,pulse E AS dv /dt T C=25 °C3 I D=40 A, R GS=25 I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation P tot T C=25 °C T A=25 °C, R thJA=45 K/W2 Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 40 160 120 ±20 60 -55 150 55/150/56 Unit A mJ kV/µs V W °C 2004-12-15 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area2 BSC079N03S G min. Values typ. Unit max. Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V BR DSS V GS=0 V, I D=1 mA

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Power-Transistor

Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• Avalanche rated
• Pb-free plating RoHS compliant

Product Summary V DS R DS on ,max ID

BSC079N03S G
30 V 40 A

P-TDSON-8

Type BSC079N03S G

Package P-TDSON-8
Ordering Code Marking Q67042 S4290 079N03S

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C

T C=100 °C

T A=25 °C, R thJA=45 K/W2

Pulsed drain current Avalanche energy, single pulse

I D,pulse E AS
dv /dt

T C=25 °C3

I D=40 A, R GS=25

I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C

Gate source voltage

Power dissipation

P tot

T C=25 °C

T A=25 °C, R thJA=45 K/W2

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 40 160 120
±20 60 -55 150 55/150/56

Unit A
mJ kV/µs V W
°C 2004-12-15

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case Thermal resistance, junction - ambient

R thJC R thJA
minimal footprint 6 cm2 cooling area2

BSC079N03S G
min.

Values typ.

Unit max.

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current

Gate-source leakage current Drain-source on-state resistance

Gate resistance Transconductance

V BR DSS V GS=0 V, I D=1 mA

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Datasheet ID: BSC079N03SG 637755