BSC032N03S

BSC032N03S Datasheet

BSC032N03S

Part	Datasheet
BSC032N03S	BSC032N03S (pdf)

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Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • Avalanche rated • dv /dt rated Product Summary V DS R DS on ,max ID BSC032N03S 30 V 50 A P-TDSON-8 Type BSC032N03S Package P-TDSON-8 Ordering Code Marking Q67042-S4219 32N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W2 Pulsed drain current Avalanche energy, single pulse I D,pulse E AS dv /dt T C=25 °C3 I D=50 A, R GS=25 I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation P tot T C=25 °C T A=25 °C, R thJA=45 K/W2 Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 50 23 200 550 ±20 78 -55 150 55/150/56 Unit A mJ kV/µs V W °C 2004-07-09 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area2 BSC032N03S min. Values typ. Unit max. Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V BR DSS V GS=0 V, I D=1 mA Gate threshold voltage

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Power-Transistor

Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• Avalanche rated
• dv /dt rated

Product Summary V DS R DS on ,max ID

BSC032N03S
30 V 50 A

P-TDSON-8

Type BSC032N03S

Package P-TDSON-8
Ordering Code Marking Q67042-S4219 32N03S

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C

T C=100 °C

T A=25 °C, R thJA=45 K/W2

Pulsed drain current Avalanche energy, single pulse

I D,pulse E AS
dv /dt

T C=25 °C3

I D=50 A, R GS=25

I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C

Gate source voltage

Power dissipation

P tot

T C=25 °C

T A=25 °C, R thJA=45 K/W2

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 50 23 200 550
±20 78 -55 150 55/150/56

Unit A
mJ kV/µs V W
°C 2004-07-09

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case Thermal resistance, junction - ambient

R thJC R thJA
minimal footprint 6 cm2 cooling area2

BSC032N03S
min.

Values typ.

Unit max.

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V BR DSS V GS=0 V, I D=1 mA

Gate threshold voltage

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Datasheet ID: BSC032N03S 637747