BGA771L16E6327XTSA1

BGA771L16E6327XTSA1 Datasheet

BGA771L16

Part	Datasheet
BGA771L16E6327XTSA1	BGA771L16E6327XTSA1 (pdf)

PDF Datasheet Preview
Data Sheet, V3.0, August 2008 BGA771L16 High Linearity Dual-Band UMTS LNA 1900/1800/2100, 800/900 MHz Small Signal Discretes Edition 2008-08-26 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics “Beschaffenheitsgarantie” . With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA771L16 - Low Power Dual-Band UMTS LNA Previous Version 2008-07-17, V2.1 preliminary Updated value for thermal resistance Added supply current characteristics Data Sheet V3.0, 2008-08-26 BGA771L16 - Low Power Dual-Band UMTS LNA Table of Contents Table of Contents 4 Description 5 Electrical Characteristics 6 Absolute Maximum Ratings 6 Thermal Resistance 6 ESD Integrity 6 DC Characteristics 7 Band Select / Gain Control Truth Table 7 Supply current characteristics TA = 25 °C 8 Logic Signal Characteristics TA = 25 °C 9 Switching Times 9 Measured RF Characteristics Low Band 10 Measured RF Characteristics UMTS Bands V / VI 10 Measured RF Characteristics UMTS Band VIII 11 Measured RF Characteristics Mid Band 12 Measured RF Characteristics UMTS Band II 12 Measured RF Characteristics UMTS Bands III / IX 13 Measured RF Characteristics UMTS Band IV 14 Measured Performance Low Band V High Gain Mode vs. Frequency 15 Measured Performance Low Band V High Gain Mode vs. Temperature 16 Measured Performance Low Band V Low Gain Mode vs. Frequency 17 Measured Performance Low Band V Low Gain Mode vs. Temperature 19 Measured Performance Mid Band II High Gain Mode vs. Frequency 20 Measured Performance Mid Band II High Gain Mode vs. Temperature 21 Measured Performance Mid Band II Low Gain Mode vs. Frequency 22 Measured Performance Mid Band II Low Gain Mode vs. Temperature 24 Application Circuit and Block Diagram 25 UMTS bands II and V Application Circuit Schematic 25 UMTS bands III and VIII Application Circuit Schematic 26 UMTS bands IV and VIII Application Circuit Schematic 27 Pin Definition 28 Application Board 29 Physical Characteristics 31 Package Footprint 31 Package Dimensions 32 Data Sheet V3.0, 2008-08-26 BGA771L16 - Low Power Dual-Band UMTS LNA The BGA771L16 is a highly flexible, high linearity dual-band 1900/1800/2100, 800/900 MHz low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA771L16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 1800 MHz or a 2100 MHz path by optimizing the input and output matching network. Note UMTS bands II / V is the standard band combination for this product requiring no external output matching network. Features • Gain 16 / dB in high / low gain mode all bands • Noise figure / dB in high gain mode 800 MHz / 1900 MHz • Supply current / mA in high / low gain mode all bands • Standby mode < 2 µA typ. • Output internally matched to 50 • Inputs pre-matched to 50 • 2kV HBM ESD protection • Low external component count • Small leadless TSLP-16-1 package x mm • Pb-free RoHS compliant package TSLP-16-1 package 5 ,10 5 2870 Figure 1 5 *1'0

PDF Datasheet Preview

Data Sheet, V3.0, August 2008

BGA771L16

High Linearity Dual-Band UMTS LNA 1900/1800/2100, 800/900 MHz

Small Signal Discretes

Edition 2008-08-26

Published by Infineon Technologies AG 81726 München, Germany

Infineon Technologies AG All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics “Beschaffenheitsgarantie” . With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BGA771L16 - Low Power Dual-Band UMTS LNA

Previous Version 2008-07-17, V2.1 preliminary

Updated value for thermal resistance

Added supply current characteristics

Data Sheet

V3.0, 2008-08-26

BGA771L16 - Low Power Dual-Band UMTS LNA

Table of Contents

Table of Contents 4

Description 5

Electrical Characteristics 6 Absolute Maximum Ratings 6 Thermal Resistance 6 ESD Integrity 6 DC Characteristics 7 Band Select / Gain Control Truth Table 7

Supply current characteristics TA = 25 °C 8 Logic Signal Characteristics TA = 25 °C 9

Switching Times 9 Measured RF Characteristics Low Band 10

Measured RF Characteristics UMTS Bands V / VI 10 Measured RF Characteristics UMTS Band VIII 11 Measured RF Characteristics Mid Band 12 Measured RF Characteristics UMTS Band II 12 Measured RF Characteristics UMTS Bands III / IX 13 Measured RF Characteristics UMTS Band IV 14 Measured Performance Low Band V High Gain Mode vs. Frequency 15 Measured Performance Low Band V High Gain Mode vs. Temperature 16 Measured Performance Low Band V Low Gain Mode vs. Frequency 17 Measured Performance Low Band V Low Gain Mode vs. Temperature 19 Measured Performance Mid Band II High Gain Mode vs. Frequency 20 Measured Performance Mid Band II High Gain Mode vs. Temperature 21 Measured Performance Mid Band II Low Gain Mode vs. Frequency 22 Measured Performance Mid Band II Low Gain Mode vs. Temperature 24

Application Circuit and Block Diagram 25 UMTS bands II and V Application Circuit Schematic 25 UMTS bands III and VIII Application Circuit Schematic 26 UMTS bands IV and VIII Application Circuit Schematic 27 Pin Definition 28 Application Board 29

Physical Characteristics 31 Package Footprint 31 Package Dimensions 32

Data Sheet

V3.0, 2008-08-26

BGA771L16 - Low Power Dual-Band UMTS LNA

The BGA771L16 is a highly flexible, high linearity dual-band 1900/1800/2100, 800/900 MHz low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA771L16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 1800 MHz or a 2100 MHz path by optimizing the input and output matching network.

Note UMTS bands II / V is the standard band combination for this product requiring no external output matching network.

Features
• Gain 16 / dB in high / low gain mode all bands
• Noise figure / dB in high gain mode
800 MHz / 1900 MHz
• Supply current / mA in high / low gain mode all bands
• Standby mode < 2 µA typ.
• Output internally matched to 50
• Inputs pre-matched to 50
• 2kV HBM ESD protection
• Low external component count
• Small leadless TSLP-16-1 package x mm
• Pb-free RoHS compliant package

TSLP-16-1 package
5 ,10
5 2870

Figure 1
5 *1'0

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BGA771L16E6327XTSA1 Datasheet file may be downloaded here without warranties.

Datasheet ID: BGA771L16E6327XTSA1 637708