BGA622H6820XTSA1
BGA622H6820XTSA1 Datasheet
BGA622
| Part | Datasheet |
|---|---|
BGA622H6820XTSA1 |
BGA622H6820XTSA1 (pdf) |
| Related Parts | Information |
|---|---|
BGA 622 E6327 |
BGA 622 E6327 |
BGA622E6820HTSA1 |
BGA622E6820HTSA1 |
| PDF Datasheet Preview |
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| BGA622 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA622 BGA622, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Previous Version 2005-11-16 Document layout change Trademarks is a registered trademark of Infineon Technologies AG. Data Sheet BGA622 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection • High gain |S21|2 = dB at GHz |S21|2 = dB at GHz |S21|2 = dB at GHz • Low noise figure, NF = dB at GHz • Operating frequency range - 6 GHz • Typical supply voltage V • On/Off-Switch • Output-match on chip, input pre-matched • Low part count • 70 GHz fT - Silicon Germanium technology • 2 kV HBM ESD protection Pin-to-Pin • Pb-free RoHS compliant package SOT343 Applications • LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN Figure 1 Pin connection The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of VCC switches the device off. While the device is switched off, it provides an insertion loss of 24 dB together with a high IIP3 up to 20 dBm. Type BGA622 Package SOT343 Marking BXs Note ESD Electrostatic discharge sensitive device, observe handling precaution Data Sheet BGA622 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection |
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