BGA615L7
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BGA615L7E6327XTSA1 (pdf) |
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BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics “Beschaffenheitsgarantie” . With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA615L7 BGA615L7 Previous Version BGA615L7 V1.2 added moisture sensitivity level added thermal resistance adjusted power gain settling times adjusted inband and out of band compression points updated recommended land pattern added solder mask defined layout added reel diameter and pcs / reel information Data Sheet Silicon Germanium GPS Low Noise Amplifier BGA615L7 Silicon Germanium GPS Low Noise Amplifier Features • High gain 18 dB • Low Noise Figure dB • Power off function • Operating frequency 1575 MHz • Supply voltage V to V • Tiny PG-TSLP-7-1 leadless package • B7HF Silicon Germanium technology • RF output internally matched to 50 • Low external component count • 1 kV HBM ESD protection including AI-pin • Moisture sensitivity level MSL 1 Application • 1575 MHz GPS TSLP-7-1 VCC PON BIAS BIAS Figure 1 Blockdiagram Description The BGA615L7 is a front-end low noise amplifier for Global Positioning System GPS applications. The LNA provides 18 dB gain, dB noise figure and high linearity performance, allowing it to be used as a first-stage LNA. Current consumption is as low as mA. The BGA615L7 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates over a V to V supply range. Type BGA615L7 Package PG-TSLP-7-1 Marking BS Chip T0595 Data Sheet BGA615L7 Pin Definition and Function Table 1 Pin No. 1 2 3 4 5 6 7 |
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