SPP15P10P
SPP15P10P Datasheet
SPP15P10P G
| Part | Datasheet |
|---|---|
SPP15P10P |
SPP15P10P (pdf) |
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| Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated SPP15P10P G Product Summary -100 V RDS on -15 A PG-TO220-3-1 Type SPP15P10P Package Marking PG-TO220-3-1 15P10P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=-15 A , VDD=-25V, ID puls EAS dv/dt IS=-15A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Gate pin1 Value -15 -60 ±20 128 +175 55/175/56 Drain pin 2 Source pin 3 Unit A mJ kV/µs V W °C 2006-10-24 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 SPP15P10P G |
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