BFG 235 E6327
BFG 235 E6327 Datasheet
BFG235
| Part | Datasheet |
|---|---|
BFG 235 E6327 |
BFG 235 E6327 (pdf) |
| PDF Datasheet Preview |
|---|
| NPN Silicon RF Transistor* • For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = GHz • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFG235 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFG235 Marking Pin Configuration BFG235 1 = E 2 = B 3 = E 4 = C - Package SOT223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 80°C VCEO VCES VCBO VEBO IC IB Ptot Junction temperature Ambient temperature Storage temperature Tstg 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb Value Unit -65 150 -65 150 2007-04-20 1 BFG235 Thermal Resistance Parameter Junction - soldering point1 Symbol RthJS Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 200 mA, VCE = 8 V, pulse measured V BR CEO 15 |
| More datasheets: V180ZT10 | V180ZT05 | V180ZS5 | V180ZS10 | V180ZS1 | V18ZA1 | 349006140 | DC025AJ-M | DC025CL-M | FP15812_STRADA-2X2MXS-VSM |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BFG235E6327 Datasheet file may be downloaded here without warranties.