BF888H6327XTSA1
BF888H6327XTSA1 Datasheet
BF888
| Part | Datasheet |
|---|---|
BF888H6327XTSA1 |
BF888H6327XTSA1 (pdf) |
| PDF Datasheet Preview |
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| BF888 High Performance Bipolar NPN RF Transistor • High transducer gain of typ. 14 dB 25 mA,6 GHz • Low minimum noise figure of typ. dB 6GHz • High output compression of typ. 11 dBm 25 mA • Pb-free RoHS compliant package • For a wide range of non-automotive applications - 2nd and 3rd LNA stage and mixer stage in LNB - GHz analog/digital cordless phone - Satellite radio SDARS - WLAN, WiMAX, UWB ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF888 Marking Pin Configuration 1=B 2=E 3=C 4=E - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Collector-emitter voltage VCEO TA = 25 °C TA = − 55 °C Collector-emitter voltage VCES Collector-base voltage VCBO Emitter-base voltage VEBO Collector current Base current Total power dissipation1 Ptot TS 89 °C Junction temperature Ambient temperature Storage temperature TStg 1Ts is measured on the emitter lead at the soldering point to the pcb Thermal Resistance Parameter Junction - soldering point1 Symbol RthJS Value |
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