• For AF input stages and driver applications<br>• High current gain<br>• Low collector-emitter saturation voltage<br>• Low noise between 30 Hz and 15 kHz<br>• Complementary types BCW61, BCX71 PNP<br>• Pb-free RoHS compliant package1<br>• Qualified according AEC Q101
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BCX70HE6433HTMA1 (pdf) |
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PDF Datasheet Preview |
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NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types BCW61, BCX71 PNP • Pb-free RoHS compliant package1 • Qualified according AEC Q101 BCW60, BCX70 Type BCW60B BCW60C BCW60D BCW60FF BCX70G BCX70H BCX70J BCX70K Marking ABs ACs ADs AFs AGs AHs AJs AKs Pin Configuration 1Pb-containing package may be available upon special request Package SOT23 2007-04-20 BCW60, BCX70 Maximum Ratings Parameter Collector-emitter voltage BCW60, ...60FF BCX70 VCEO Collector-base voltage BCW60, ...60FF BCX70 VCBO Emitter-base voltage VEBO Collector current Peak collector current Peak base current Total power dissipation Ptot TS 71 °C Junction temperature Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1 Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 32 45 32 45 6 100 200 330 150 -65 150 Value 240 Unit V mA mW °C Unit K/W 2007-04-20 BCW60, BCX70 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter |
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