BCW60FNE6393HTSA1
BCW60FNE6393HTSA1 Datasheet
BCW60, BCX70
| Part | Datasheet |
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BCW60FNE6393HTSA1 |
BCW60FNE6393HTSA1 (pdf) |
| PDF Datasheet Preview |
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| NPN Silicon AF Transistors BCW60, BCX70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz types BCW61, BCX71 PNP 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration Package SOT23 Jan-29-2002 BCW60, BCX70 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Peak base current Total power dissipation, TS = 71 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1 VCEO VCBO VEBO IC ICM IBM Ptot Tj Tstg BCW60 32 5 BCW60FF BCX70 -65 150 Unit V mW °C RthJS Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V BR CEO IC = 10 mA, IB = 0 BCW60/60FF BCX70 Collector-base breakdown voltage V BR CBO IC = 10 µA, IB = 0 BCW60/60FF BCX70 Emitter-base breakdown voltage IE = 1 µA, IC = 0 V BR EBO 5 1For calculation of RthJA please refer to Application Note Thermal Resistance Jan-29-2002 BCW60, BCX70 |
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