MT16VDDF6464HG-335G2

MT16VDDF6464HG-335G2 Datasheet

MT16VDDF6464H 512MB MT16VDDF12864H 1GB

Part	Datasheet
MT16VDDF6464HG-335G2	MT16VDDF6464HG-335G2 (pdf)

Related Parts	Information
MT16VDDF12864HY-40BJ1	MT16VDDF12864HY-40BJ1
MT16VDDF6464HY-335K1	MT16VDDF6464HY-335K1
MT16VDDF6464HY-40BK1	MT16VDDF6464HY-40BK1
MT16VDDF6464HY-335G2	MT16VDDF6464HY-335G2
MT16VDDF12864HG-335F2	MT16VDDF12864HG-335F2
MT16VDDF12864HG-40BF2	MT16VDDF12864HG-40BF2
MT16VDDF12864HY-335D2	MT16VDDF12864HY-335D2
MT16VDDF12864HG-335D2	MT16VDDF12864HG-335D2
MT16VDDF12864HY-335F2	MT16VDDF12864HY-335F2
MT16VDDF12864HY-40BD2	MT16VDDF12864HY-40BD2
MT16VDDF12864HY-40BF2	MT16VDDF12864HY-40BF2
MT16VDDF6464HG-40BG2	MT16VDDF6464HG-40BG2

PDF Datasheet Preview
512MB, 1GB x64, DR 200-Pin DDR SODIMM Features DDR SDRAM SODIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB For component data sheets, refer to Micron’s Web site: • 200-pin, small-outline dual in-line memory module SODIMM • Fast data transfer rates PC2100, PC2700, and PC3200 • 512MB 64 Meg x 64 and 1GB 128 Meg x 64 • VDD = VDDQ = +2.5V -40B VDD = VDDQ = +2.6V • VDDSPD = +2.3V to +3.6V • 2.5V I/O SSTL_2-compatible • Internal, pipelined double data rate DDR 2n-prefetch architecture two data accesses per clock cycle • Bidirectional data strobe DQS transmitted/received with is, source-synchronous data capture • Differential clock inputs CK and CK# • Multiple internal device banks for concurrent operation • Dual rank • Programmable burst lengths BL 2, 4, or 8 • Auto precharge option • Auto refresh and self refresh modes 7.8125µs maximum average periodic refresh interval • Serial presence-detect SPD with EEPROM • Selectable CAS latency CL for maximum compatibility • Gold edge contacts 200-Pin SODIMM Figures Figure 1 512MB 200-Pin SODIMM MO-244 PCB height 31.75mm 1.25in Figure 2 1GB 200-Pin SODIMM MO-244 PCB height 31.75mm 1.25in Options Marking • Self refresh current Standard Low power1 None L • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C • Package None I 200-pin DIMM standard 200-pin DIMM Pb-free 2 • Memory clock, speed, CAS latency 5.0ns 200 MHz , 400 MT/s, CL = 3 -40B 6.0ns 167 MHz , 333 MT/s, CL = 7.5ns 133 MHz , 266 MT/s, CL = -335 -265 Notes See Table 9 on page 10 , Table 10 on page 11, or Table 11 on page 12 for low power values. Contact Micron for product availability. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 512MB, 1GB x64, DR 200-Pin DDR SODIMM Features Table 1 Key Timing Parameters Speed Grade -40B -335 -265 Industry Data Rate MT/s tRCD Nomenclature

PDF Datasheet Preview

512MB, 1GB x64, DR 200-Pin DDR SODIMM Features

DDR SDRAM SODIMM

MT16VDDF6464H 512MB MT16VDDF12864H 1GB

For component data sheets, refer to Micron’s Web site:
• 200-pin, small-outline dual in-line memory module SODIMM
• Fast data transfer rates PC2100, PC2700, and PC3200
• 512MB 64 Meg x 64 and 1GB 128 Meg x 64
• VDD = VDDQ = +2.5V
-40B VDD = VDDQ = +2.6V
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O SSTL_2-compatible
• Internal, pipelined double data rate DDR
2n-prefetch architecture two data accesses per clock cycle
• Bidirectional data strobe DQS transmitted/received with is, source-synchronous data capture
• Differential clock inputs CK and CK#
• Multiple internal device banks for concurrent operation
• Dual rank
• Programmable burst lengths BL 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes 7.8125µs maximum average periodic refresh interval
• Serial presence-detect SPD with EEPROM
• Selectable CAS latency CL for maximum compatibility
• Gold edge contacts
200-Pin SODIMM Figures

Figure 1 512MB 200-Pin SODIMM MO-244

PCB height 31.75mm 1.25in

Figure 2 1GB 200-Pin SODIMM MO-244

PCB height 31.75mm 1.25in

Options

Marking
• Self refresh current

Standard Low power1

None L
• Operating temperature

Commercial 0°C TA +70°C Industrial TA +85°C
• Package

None I
200-pin DIMM standard
200-pin DIMM Pb-free 2
• Memory clock, speed, CAS latency
5.0ns 200 MHz , 400 MT/s, CL = 3
-40B
6.0ns 167 MHz , 333 MT/s, CL = 7.5ns 133 MHz , 266 MT/s, CL =
-335 -265

Notes See Table 9 on page 10 , Table 10 on page 11,
or Table 11 on page 12 for low power values.

Contact Micron for product availability.

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB x64, DR 200-Pin DDR SODIMM Features

Table 1 Key Timing Parameters

Speed Grade
-40B -335 -265

Industry

Data Rate MT/s
tRCD

Nomenclature

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Datasheet ID: MT16VDDF6464HG-335G2 648318